Fermi level shift with photovoltages at zinc modified CdSe surfacesMANDAL, K. C.Journal of materials science letters. 1990, Vol 9, Num 10, pp 1203-1204, issn 0261-8028Article

Evaluation of the surface properties of chemically deposited n-CdS thin films by sub-bandgap response studiesMANDAL, K. C; GHOSAL, A.Indian journal of technology. 1990, Vol 28, Num 12, pp 707-710, issn 0019-5669, 4 p.Article

Fabrication of low-cost n-Sb₂S₃/p-Ge heterojunction solar cellsSAVADOGO, O; MANDAL, K. C.Journal of physics. D, Applied physics (Print). 1994, Vol 27, Num 5, pp 1070-1075, issn 0022-3727Article

A new chemical method for preparing semiconductor grade antimony tri-sulphide thin filmsMANDAL, K. C; MONDAL, A.The Journal of physics and chemistry of solids. 1990, Vol 51, Num 11, pp 1339-1341, issn 0022-3697, 3 p.Article

Photoelectrochemical (PEC) solar cell properties of chemically deposited cadmium selenide thin films with heteropolyacidsSAVADOGO, O; MANDAL, K. C.Materials chemistry and physics. 1992, Vol 31, Num 4, pp 301-309, issn 0254-0584Article

High-efficiency chemically deposited CdSe photoelectrochemical solar cells : effect of SiW₁₂O₄₀^4- incorporationMANDAL, K. C; SAVADOGO, O.Journal of materials science letters. 1991, Vol 10, Num 24, pp 1446-1448, issn 0261-8028Article

Improved Schottky barrier on n-Sb₂S₃ films chemically deposited with silicotungstic acidSAVADOGO, O; MANDAL, K. C.Electronics Letters. 1992, Vol 28, Num 18, pp 1682-1683, issn 0013-5194Article

Chemically deposited semiconducting molybdenum sulfide thin filmsMANDAL, K. C; MONDAL, A.Journal of solid state chemistry (Print). 1990, Vol 85, Num 1, pp 176-179, issn 0022-4596, 4 p.Article

Low-cost technique for preparing n-Sb₂S₃/p-Si heterojunction solar cellsSAVADOGO, O; MANDAL, K. C.Applied physics letters. 1993, Vol 63, Num 2, pp 228-230, issn 0003-6951Article

Characterizations of antimony tri-sulfide chemically deposited with silicotungstic acidSAVADOGO, O; MANDAL, K. C.Journal of the Electrochemical Society. 1992, Vol 139, Num 1, pp L16-L18, issn 0013-4651Article

Chemically deposited n-CdSe thin film photo-electrochemical cells : effects of Zn²⁺-modificationMANDAL, K. C; SAVADOGO, O.Journal of materials science. 1992, Vol 27, Num 16, pp 4355-4360, issn 0022-2461Article

Studies on new chemically deposited photoconducting antimony trisulphide thin filmsSAVADOGO, O; MANDAL, K. C.Solar energy materials and solar cells. 1992, Vol 26, Num 1-2, pp 117-136, issn 0927-0248Article

A new chemical method of preparing semiconducting MoX₂ (X=S, Se) thin filmsMANDAL, K. C; SAVADOGO, O.Japanese journal of applied physics. 1991, Vol 30, Num 12A, pp 3484-3487, issn 0021-4922, 1Article

In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and GeMANDAL, K. C; OZANAM, F; CHAZALVIEL, J.-N et al.Applied physics letters. 1990, Vol 57, Num 26, pp 2788-2790, issn 0003-6951, 3 p.Article

Studies of sub-bandgap response on surface-modified n-CdSe photoelectrodesMANDAL, K. C; SANTHANAM, K. S. V.Journal of materials science. 1991, Vol 26, Num 14, pp 3905-3908, issn 0022-2461, 4 p.Article

Studies on the population of the gall insect Trioza fletcheri Minor (Crawford) (Psyllidae: Homoptera) at the field laboratory of central Tasar research and training institute, Nagri = Etudes sur la population de l'insecte parasite Trioza fletcheri minor (Psyllidae: Homoptera) au laboratoire de recherche du central tasar research and training institute, NagriSINGH, R. N; MANDAL, K. C; DHAR, S. L et al.Séricologia. 1988, Vol 28, Num 1, pp 117-122, issn 0250-3980Article

XPS investigation of CdTe surfaces: effect of Ru modificationBOSE, D. N; HEDGE, M. S; BASU, S et al.Semiconductor science and technology. 1989, Vol 4, Num 10, pp 866-870, issn 0268-1242, 5 p.Article

Evidence for amphoteric behavior of Ru on CdTe surfacesBOSE, D. N; BASU, S; MANDAL, K. C et al.Applied physics letters. 1986, Vol 48, Num 7, pp 472-474, issn 0003-6951Article

Evaluation of rice-husk silicon by photoelectrochemical techniquesBOSE, D. N; MANDAL, K. C; BASU, S et al.Miami international conference on alternative energy sources. 6. sd, pp 210-211Conference Paper

Investigation of CdZnTe crystal defects using scanning spreading resistance microscopyLIU, J; MANDAL, K. C; KOLEY, D. G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7079, pp 70790C.1-70790C.9, issn 0277-786X, isbn 978-0-8194-7299-1 0-8194-7299-9Conference Paper

A comparative study of CdTe films prepared by different techniquesSANYAL, G. S; MONDAL, A; MANDAL, K. C et al.Solar energy materials. 1990, Vol 20, Num 5-6, pp 395-404, issn 0165-1633, 10 p.Article

Surface-modified CdTe PEC solar cellsMANDAL, K. C; BASU, S; BOSE, D. N et al.Solar cells. 1986, Vol 18, Num 1, pp 25-30, issn 0379-6787Article

Investigation of nanoscale electronic properties of CdZnTe crystals by scanning spreading resistance microscopyLIU, J; MANDAL, K. C; KOLEY, G et al.Semiconductor science and technology. 2009, Vol 24, Num 4, issn 0268-1242, 045012.1-045012.5Article

Effect of surface modification on sub-bandgap response of n-CdTe photoelectrodesMANDAL, K. C; BASU, S; BOSE, D. N et al.Surface science. 1987, Vol 188, Num 1-2, pp 235-240, issn 0039-6028Article

Effects of surface modification on n-CdTe photoelectrochemical solar cellsMANDAL, K. C; BASU, S; BOSE, D. N et al.Journal of physical chemistry (1952). 1987, Vol 91, Num 15, pp 4011-4013, issn 0022-3654Article